LOW-RESISTIVITY MICRO-BORON DOPED ROTARY SPUTTERING SILICON TARGET MATERIAL AND PREPARATION METHOD THEREFOR - XIAMEN YINGRI NEW MATERIAL TECHNOLOGY CO LTD

Title:

LOW-RESISTIVITY MICRO-BORON DOPED ROTARY SPUTTERING SILICON TARGET MATERIAL AND PREPARATION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2016/041361

Kind Code:

A1

Abstract:

Provided are a low-resistivity micro-boron doped rotary sputtering silicon target material and a preparation method therefor. The target material is prepared from 0.03wt% to 0.5wt% of boron and 99.4wt% to 99.9wt% of silicon and impurities. The preparation method comprises: preparing a stainless steel back tube, preparing powder containing boron and silicon, performing vacuum plasma spraying of the powder containing boron and silicon onto the surface of the stainless steel back tube, and machining the target material.

Inventors:

LUO YONGCHUN (CN)
ZENG DUNFENG (CN)
LUO JIANDONG (CN)
WANG ZHIQIANG (CN)

Application Number:

PCT/CN2015/078581

Publication Date:

March 24, 2016

Filing Date:

May 08, 2015

Export Citation:

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Assignee:

XIAMEN YINGRI NEW MATERIAL TECHNOLOGY CO LTD (CN)

International Classes:

C23C14/14; C23C4/134; C23C4/04; C23C14/34

Foreign References:

CN1525562A	2004-09-01
CN103346069A	2013-10-09
CN103045995A	2013-04-17
CN202148348U	2012-02-22
CN101519768A	2009-09-02

Attorney, Agent or Firm:

XIAMEN JINGCHENGXINCHUANG INTELLECTUAL PROPERTY AGENCY CO. LTD (CN)
厦门市精诚新创知识产权代理有限公司 (CN)

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