Title:
LOW-TEMPERATURE POLYSILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/192558
Kind Code:
A1
Abstract:
A polysilicon thin film and thin film transistor and manufacturing method thereof, array substrate and display device; the low-temperature polysilicon thin film transistor comprises a substrate (1), a buffer layer (2) formed on the substrate (1), an active layer (3) formed on the buffer layer (2) via a patterning process, and a thermal insulating layer (4) formed on the active layer (3). The thermal insulating layer (4) is designed in a polysilicon thin film structure, and together with the buffer layer (2), performs dual-layer thermal insulation respectively on the upper surface and lower surface of the active layer (3), thus obviously extending the polysilicon crystallization time.
Inventors:
BAI NINI (CN)
ZHANG KUNPENG (CN)
KANG FENG (CN)
GAO PENGFEI (CN)
HAN SHUAI (CN)
LIU YU (CN)
ZHANG KUNPENG (CN)
KANG FENG (CN)
GAO PENGFEI (CN)
HAN SHUAI (CN)
LIU YU (CN)
Application Number:
PCT/CN2014/088764
Publication Date:
December 23, 2015
Filing Date:
October 16, 2014
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L29/786; H01L27/32; H01L51/52; H01L51/56
Foreign References:
| US5946562A | 1999-08-31 | |||
| CN103681776A | 2014-03-26 | |||
| CN104078621A | 2014-10-01 | |||
| CN203895510U | 2014-10-22 | |||
| CN1553474A | 2004-12-08 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
北京市柳沈律师事务所 (CN)
北京市柳沈律师事务所 (CN)
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