Title:
METHOD FOR PRODUCING SiC EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2015/033752
Kind Code:
A1
Abstract:
This method for producing an SiC epitaxial wafer comprises: a step for vacuum baking a coated carbon material member at a vacuum degree of 2.0 × 10-3 Pa or less in a vacuum baking furnace for exclusive use; a step for placing the coated carbon material member in an epitaxial wafer production apparatus; and a step for disposing an SiC substrate in the epitaxial wafer production apparatus and epitaxially growing an SiC epitaxial film on the SiC substrate.
Inventors:
ODAWARA MICHIYA (JP)
TAJIMA YUTAKA (JP)
MUTO DAISUKE (JP)
MOMOSE KENJI (JP)
TAJIMA YUTAKA (JP)
MUTO DAISUKE (JP)
MOMOSE KENJI (JP)
Application Number:
PCT/JP2014/071380
Publication Date:
March 12, 2015
Filing Date:
August 13, 2014
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/205; C23C16/42; C23C16/44; C30B25/20; C30B29/36
Domestic Patent References:
| WO2006008941A1 | 2006-01-26 |
Foreign References:
| JP2003086518A | 2003-03-20 | |||
| JPH11319546A | 1999-11-24 | |||
| JP2009117646A | 2009-05-28 | |||
| JP2002249376A | 2002-09-06 | |||
| JP2007243024A | 2007-09-20 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
Download PDF:
Previous Patent: DISPLAY DEVICE
Next Patent: METHOD FOR PRODUCING ENDO-9-AZABICYCLO[3.3.1]NONANE-3-OL DERIVATIVE
Next Patent: METHOD FOR PRODUCING ENDO-9-AZABICYCLO[3.3.1]NONANE-3-OL DERIVATIVE