Title:
METHOD FOR PRODUCING SiC MONOCRYSTAL
Document Type and Number:
WIPO Patent Application WO/2015/072136
Kind Code:
A1
Abstract:
Provided is a method for producing an SiC monocrystal by means of a solution growth method, wherein it is possible to grow a SiC monocrystal doped with Al even if a graphite crucible is used. The method of production contains: a step for generating an Si-C solution in a graphite crucible; and a step for contacting an SiC seed crystal to the Si-C solution, causing the growth of an SiC monocrystal on the SiC seed crystal. The Si-C solution contains Si, Al, and Cu in ranges satisfying formula (1), and the remainder of the Si-C solution comprises C and impurities. In formula (1), [Si], [Al], and [Cu] respectively represent the mol% content of Si, Al, and Cu. 0.03 < [Cu]/([Si] + [Al] + [Cu]) ≤ 0.5 (1).
Inventors:
KUSUNOKI KAZUHIKO (JP)
KAMEI KAZUHITO (JP)
KAMEI KAZUHITO (JP)
Application Number:
PCT/JP2014/005671
Publication Date:
May 21, 2015
Filing Date:
November 12, 2014
Export Citation:
Assignee:
NIPPON STEEL & SUMITOMO METAL CORP (JP)
International Classes:
C30B29/36; C30B19/04
Foreign References:
| JP2008100890A | 2008-05-01 | |||
| JP2012111669A | 2012-06-14 | |||
| JP2009280436A | 2009-12-03 |
Attorney, Agent or Firm:
ASCEND IP LAW FIRM (JP)
アセンド patent business corporation (JP)
アセンド patent business corporation (JP)
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