Title:
MAGNESIUM-SILICON COMPOSITE MATERIAL AND PROCESS FOR PRODUCING SAME, AND THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC CONVERSION MODULE EACH COMPRISING OR INCLUDING THE COMPOSITE MATERIAL
Document Type and Number:
WIPO Patent Application WO/2011/002035
Kind Code:
A1
Abstract:
Provided is a magnesium-silicon composite material which contains Mg2Si as an intermetallic compound imposing no burden on the environment, is suitable for use as a material for thermoelectric conversion modules, and has excellent thermoelectric conversion performance. The magnesium-silicon composite material has a dimensionless figure-of-merit parameter at 866K of 0.665 or larger. This magnesium-silicon composite material can have high thermoelectric conversion performance when used in, for example, a thermoelectric conversion module.
Inventors:
IIDA TSUTOMU (JP)
HONDA YASUHIKO (JP)
FUKUSHIMA NAOKI (JP)
SAKAMOTO TATSUYA (JP)
MITO YOHIKO (JP)
NANBA HIROKUNI (JP)
TAGUCHI YUTAKA (JP)
HONDA YASUHIKO (JP)
FUKUSHIMA NAOKI (JP)
SAKAMOTO TATSUYA (JP)
MITO YOHIKO (JP)
NANBA HIROKUNI (JP)
TAGUCHI YUTAKA (JP)
Application Number:
PCT/JP2010/061185
Publication Date:
January 06, 2011
Filing Date:
June 30, 2010
Export Citation:
Assignee:
UNIV TOKYO SCI EDUC FOUND (JP)
SHOWA KDE CO LTD (JP)
UNION MATERIALS INC (JP)
IIDA TSUTOMU (JP)
HONDA YASUHIKO (JP)
FUKUSHIMA NAOKI (JP)
SAKAMOTO TATSUYA (JP)
MITO YOHIKO (JP)
NANBA HIROKUNI (JP)
TAGUCHI YUTAKA (JP)
SHOWA KDE CO LTD (JP)
UNION MATERIALS INC (JP)
IIDA TSUTOMU (JP)
HONDA YASUHIKO (JP)
FUKUSHIMA NAOKI (JP)
SAKAMOTO TATSUYA (JP)
MITO YOHIKO (JP)
NANBA HIROKUNI (JP)
TAGUCHI YUTAKA (JP)
International Classes:
H01L35/14; H01L35/32; H01L35/34
Domestic Patent References:
| WO2008075789A1 | 2008-06-26 |
Foreign References:
| JP2006128235A | 2006-05-18 | |||
| JPH11274578A | 1999-10-08 | |||
| JP2005314805A | 2005-11-10 | |||
| JP2002285274A | 2002-10-03 |
Other References:
ZAITSEV V.K. ET AL.: "Thermoelectrics of n-type With ZT>1 Based on Mg2Si-Mg2Sn Solid Solutions", 24TH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 2005, 2005, pages 189 - 195, XP008159373
"Semiconducting Properties of Mg2Si Single Crystals", PHYSICAL REVIEW, vol. 109, no. 6, 15 March 1958 (1958-03-15), pages 1909 - 1915
"Seebeck Effect in Mg2Si Single Crystals", J. PHYS. CHEM. SOLIDS PROGRAM PRESS, vol. 23, 1962, pages 601 - 610
"Bulk Crystals Growth of Mg2Si by the Vertical Bridgeman Method", SCIENCE DIRECT THIN SOLID FILMS, vol. 461, 2004, pages 86 - 89
See also references of EP 2461383A4
"Semiconducting Properties of Mg2Si Single Crystals", PHYSICAL REVIEW, vol. 109, no. 6, 15 March 1958 (1958-03-15), pages 1909 - 1915
"Seebeck Effect in Mg2Si Single Crystals", J. PHYS. CHEM. SOLIDS PROGRAM PRESS, vol. 23, 1962, pages 601 - 610
"Bulk Crystals Growth of Mg2Si by the Vertical Bridgeman Method", SCIENCE DIRECT THIN SOLID FILMS, vol. 461, 2004, pages 86 - 89
See also references of EP 2461383A4
Attorney, Agent or Firm:
SHOBAYASHI, Masayuki (JP)
Right wood Masayuki (JP)
Right wood Masayuki (JP)
Download PDF:
Previous Patent: NEEDLE-LIKE MATERIAL
Next Patent: DIVIDED ANNULAR RIB-SHAPED PLASMA PROCESSING DEVICE
Next Patent: DIVIDED ANNULAR RIB-SHAPED PLASMA PROCESSING DEVICE