Title:
MAGNETIC FLUX CONCENTRATING CLADDING MATERIAL ON CONDUCTIVE LINES OF MRAM
Document Type and Number:
WIPO Patent Application WO2003077258
Kind Code:
A3
Abstract:
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line (47) proximate to a magnetoresistive memory device (40). The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer (49) is then immersed in an electroless plating bath to form a flux concentrating layer (50) on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer (52) on the flux concentrating layer.
Inventors:
MOLLA JAYNAL A
D URSO JOHN
KYLER KELLY
ENGEL BRADLEY N
GRYNKEWICH GREGORY W
RIZZO NICHOLAS D
D URSO JOHN
KYLER KELLY
ENGEL BRADLEY N
GRYNKEWICH GREGORY W
RIZZO NICHOLAS D
Application Number:
PCT/US2003/006020
Publication Date:
December 31, 2003
Filing Date:
February 27, 2003
Export Citation:
Assignee:
MOTOROLA INC (US)
International Classes:
H01L27/105; C25D5/12; G11C11/15; G11C11/16; H01L21/00; H01L21/4763; H01L21/8246; H01L27/22; (IPC1-7): G11C11/15; G11C11/16; H01L21/8246
Domestic Patent References:
| WO2002041367A2 | 2002-05-23 |
Foreign References:
| US20010050859A1 | 2001-12-13 | |||
| GB1052646A | ||||
| US20030089933A1 | 2003-05-15 | |||
| US6211090B1 | 2001-04-03 | |||
| US6501144B1 | 2002-12-31 |
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