Title:
MAGNETIC MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/220251
Kind Code:
A1
Abstract:
A magnetic memory element (100) is provided with: an antiferromagnetic layer (110) that is laminated on a substrate (2) and comprises a canted antiferromagnetic body having a magnetic order with a canted magnetic moment; a heavy metal layer (120) that is laminated on the antiferromagnetic layer (110) and comprises a non-magnetic heavy metal exhibiting a spin Hall effect; and, an oxide layer (130) on the heavy metal layer (120). The roughness of the interface between the antiferromagnetic layer (110) and the heavy metal layer (120) is 1.0 nm or less. When a write current flows in the in-plane direction to the heavy metal layer (120), a spin current is generated, and, by the spin orbit torque generated by the spin current acting on the magnetic order of the antiferromagnetic layer (110), the magnetic order can be inverted.
Inventors:
NAKATSUJI SATORU (JP)
HIGO TOMOYA (JP)
HIGO TOMOYA (JP)
Application Number:
PCT/JP2022/017647
Publication Date:
October 20, 2022
Filing Date:
April 12, 2022
Export Citation:
Assignee:
UNIV TOKYO (JP)
International Classes:
H01L43/08; H01L21/8239; H01L27/105; H01L43/10
Domestic Patent References:
| WO2017018391A1 | 2017-02-02 | |||
| WO2019045055A1 | 2019-03-07 | |||
| WO2020166722A1 | 2020-08-20 |
Foreign References:
| JP2019110326A | 2019-07-04 |
Attorney, Agent or Firm:
DORAIT IP LAW FIRM (JP)
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