Title:
MAGNETIC MEMORY AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/109582
Kind Code:
A1
Abstract:
Provided are a magnetic memory and a preparation method therefor. The magnetic memory comprises at least one hybrid storage array, the hybrid storage array comprising an STT-MRAM array and an SOT-MRAM array arranged adjacent to each other, wherein the STT-MRAM array comprises STT-MRAM storage units arranged in an array, the SOT-MRAM array comprises SOT-MRAM storage units arranged in an array, and the STT-MRAM storage units and the SOT-MRAM storage units have the same laminated structure. The magnetic memory of the present invention can not only fulfil the long-term storage requirement of a large amount of data, but also fulfil the frequent erasure and writing of the large amount of data.
Inventors:
MENG HAO (CN)
CHI KE QUN (CN)
CHI KE QUN (CN)
Application Number:
PCT/CN2020/103232
Publication Date:
June 10, 2021
Filing Date:
July 21, 2020
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08; H01L43/10
Foreign References:
| CN109166962A | 2019-01-08 | |||
| CN108538328A | 2018-09-14 | |||
| US20190287591A1 | 2019-09-19 | |||
| CN107611255A | 2018-01-19 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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