MAGNETIC MEMORY STRUCTURE AND DEVICE

WIPO Patent Application WO/2021/163908

A1

Magnetic memory devices and methods are provided. In one aspect, a memory device may comprise a control circuitry and at least one array of memory structures. Each memory structure may comprise a metal layer and a first magnetic tunnel junction (MTJ) disposed on the metal layer. The metal layer may include a first region and a second region. Electrical resistivity of at least a first part of the first region is different from electrical resistivity of the second region. The first magnetic tunnel junction (MTJ) may comprise a first free layer adjacent to the metal layer, a first barrier layer adjacent to the first free layer, and a first reference layer adjacent to the first barrier layer. The first free layer is in contact with the first region of the metal layer. A direction of magnetization of the first free layer is switchable between a first direction and a second direction under an influence of an electric current flowing along the metal layer. The first barrier layer comprises an electrically insulating material. The first free layer is disposed between the metal layer and the first barrier layer. A direction of magnetization of the first reference layer remains along the first direction or the second direction. The first barrier layer is disposed between the first free layer and the first reference layer.

YU DAN (CN)

PCT/CN2020/075794

August 26, 2021

February 19, 2020

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YANGTZE MEMORY TECH CO LTD (CN)

H01L43/08

CN110197682A	2019-09-03
CN110197682A	2019-09-03
CN109873076A	2019-06-11
CN108292704A	2018-07-17
CN108292704A	2018-07-17
US20110069537A1	2011-03-24
EP3319134A1	2018-05-09

NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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