Title:
MAGNETIC RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/048084
Kind Code:
A1
Abstract:
A magnetic random access memory device and a manufacturing method therefor. Said device comprises a substrate (100) on which a bottom electrode (1002) is formed, a magnetic tunnel junction unit(101) located above the bottom electrode (1002), a metal hard mask (102) located above the magnetic tunnel junction unit (101), a first dielectric layer (103), a second dielectric layer (104) and a top electrode (105), a vertical portion of the first dielectric layer (103) covering side walls of the magnetic tunnel junction unit (101) and the metal hard mask (102), a horizontal portion of the first dielectric layer (103) covering the upper surface of the bottom electrode (1002), the second dielectric layer (104) being located above the horizontal portion of the first dielectric layer (103) and surrounding the vertical portion of the first dielectric layer (103), and the top electrode (105) covering the upper surface of the metal hard mask (102). The magnetic random access memory device can solve the problem of interconnection between an MTJ unit and a top electrode (105) when manufacturing an MTJ unit of a high-density MRAM.
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Inventors:
SHEN LIJIE (CN)
ZHANG DONGSHAN (CN)
ZHANG DONGSHAN (CN)
Application Number:
PCT/CN2020/140880
Publication Date:
March 10, 2022
Filing Date:
December 29, 2020
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08; H01L43/12
Foreign References:
| CN111933791A | 2020-11-13 | |||
| US20150372225A1 | 2015-12-24 | |||
| CN108075037A | 2018-05-25 | |||
| CN107623014A | 2018-01-23 | |||
| US20160133828A1 | 2016-05-12 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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