Title:
MAGNETIC RANDOM ACCESS MEMORY AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/142681
Kind Code:
A1
Abstract:
A magnetic random access memory and an electronic device, which are used to increase the storage density of a magnetic random access memory. The magnetic random access memory comprises a plurality of structural units and a plurality of voltage control lines, wherein the plurality of voltage control lines are parallel; planes where the plurality of structural units are located are parallel; and the plane where each structural unit from among the plurality of structural units is located is perpendicular to the plurality of voltage control lines. Each structural unit comprises a plurality of layers of storage structures, which structures are stacked in sequence; each layer of storage structure from among the plurality of layers of storage structures comprises an electrode line, and a plurality of storage units that are arranged on the electrode line; each storage unit from among the plurality of storage units comprises a magnetic tunnel junction; and one end of each storage unit is connected to the electrode line, and the other end thereof is connected to a voltage control line from among the plurality of voltage control lines.
Inventors:
YE LI (CN)
LI WENJING (CN)
LI WENJING (CN)
Application Number:
PCT/CN2020/072335
Publication Date:
July 22, 2021
Filing Date:
January 15, 2020
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L43/08
Foreign References:
| CN110164902A | 2019-08-23 | |||
| CN107251145A | 2017-10-13 | |||
| CN110572593A | 2019-12-13 | |||
| CN107104121A | 2017-08-29 | |||
| US20190214429A1 | 2019-07-11 |
Other References:
See also references of EP 4075529A4
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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