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Patent Searching and Data


Title:
MAGNETIC RECORDING ARRAY AND MAGNETORESISTANCE EFFECT UNIT
Document Type and Number:
WIPO Patent Application WO/2021/176646
Kind Code:
A1
Abstract:
A magnetic according array according to the present embodiment has a plurality of units. The units each have a first magnetoresistance effect element, a second magnetoresistance effect element and a write transistor. The first magnetoresistance effect element and the second magnetoresistance effect element each have wiring and a laminate that is laminated on the wiring. The write transistor is connected to the wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element. The wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element are electrically connected in series when writing, and the write current flows through the respective wiring. The direction of the write current flowing through the wiring of the first magnetoresistance effect element is the inverse of the direction of the write current flowing through the wiring of the second magnetoresistance effect element.

Inventors:
SASAKI TOMOYUKI (JP)
Application Number:
PCT/JP2020/009380
Publication Date:
September 10, 2021
Filing Date:
March 05, 2020
Export Citation:
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Assignee:
TDK CORP (JP)
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L43/08
Foreign References:
JP2019033166A2019-02-28
JP2005526351A2005-09-02
US20190057731A12019-02-21
US10483457B12019-11-19
US6639831B12003-10-28
US6862215B12005-03-01
US20160225426A12016-08-04
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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