Title:
MAGNETIC RELUCTANCE ELEMENT AND METHOD FOR PREPARATION THEREOF AND NONVOLATILE MEMORY COMPRISING THE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2003/069691
Kind Code:
A1
Abstract:
A magnetic reluctance element, wherein at least one of a pair of ferromagnetic layers sandwiching a non-magnetic layer has a composition represented by (MxLy)100-zRz, at the interface with the non-magnetic layer and the above non-magnetic layer contains at least one element selected from among B, C, N, O and P, where M is represented by FeaCobNic, L is at least one element selected from among Pt, Pd, Ir and Rh, R is an element constituting the above non-magnetic layer and generates a free energy in forming a compound together with at least one element selected from among B, C, N, O and P, which free energy is lower than that in the case of any element contained in the above composition as M or L, and a, b, c, x, y and z satisfy x + y = 100, 0 < y ≤ 35 and 0.1 ≤ z ≤ 20; and a method for preparing the magnetic reluctance element which comprises a first heat treatment step of holding the above layers at 200 to 330&ring C for 1 hr or longer and a second heat treating step of heating the layers at340&ring C or higher. The magnetic reluctance element exhibits an enhanced MR ratio.
Inventors:
MATSUKAWA NOZOMU (JP)
HIRAMOTO MASAYOSHI (JP)
ODAGAWA AKIHIRO (JP)
SUGITA YASUNARI (JP)
SATOMI MITSUO (JP)
KAWASHIMA YOSHIO (JP)
HIRAMOTO MASAYOSHI (JP)
ODAGAWA AKIHIRO (JP)
SUGITA YASUNARI (JP)
SATOMI MITSUO (JP)
KAWASHIMA YOSHIO (JP)
Application Number:
PCT/JP2003/001596
Publication Date:
August 21, 2003
Filing Date:
February 14, 2003
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
MATSUKAWA NOZOMU (JP)
HIRAMOTO MASAYOSHI (JP)
ODAGAWA AKIHIRO (JP)
SUGITA YASUNARI (JP)
SATOMI MITSUO (JP)
KAWASHIMA YOSHIO (JP)
MATSUKAWA NOZOMU (JP)
HIRAMOTO MASAYOSHI (JP)
ODAGAWA AKIHIRO (JP)
SUGITA YASUNARI (JP)
SATOMI MITSUO (JP)
KAWASHIMA YOSHIO (JP)
International Classes:
H01F10/32; H01F41/30; H01L43/08; H01L43/12; G11B5/39; H01L27/22; (IPC1-7): H01L43/08; H01L43/12; G11B5/39; G01R33/09; H01F10/16
Domestic Patent References:
| WO2001024289A1 | 2001-04-05 |
Foreign References:
| US5780176A | 1998-07-14 | |||
| JP2003086865A | 2003-03-20 | |||
| JP2002344042A | 2002-11-29 | |||
| EP1182713A2 | 2002-02-27 | |||
| JP2002319722A | 2002-10-31 |
Other References:
SUGITA Y. ET AL.: "Tunnel magnetoresistance enhancement for Pt-added magnetic tunnel junctions", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 41, no. 10A, 1 October 2002 (2002-10-01), pages L1072 - L1074, XP002969430
Attorney, Agent or Firm:
IKEUCHI SATO & PARTNER PATENT ATTORNEYS (OAP TOWER 8-30, Tenmabashi 1-chome, Kita-k, Osaka-shi Osaka, JP)
Download PDF: