MAGNETIC RESISTANCE EFFECT ELEMENT, MAGNETIC RESISTANCE EFFECT TYPE MAGNETIC HEAD, AND METHOD OF MANUFACTURING THE ELEMENT AND THE MAGNETIC HEAD

WIPO Patent Application WO/2002/039512

A1

A spindle valve type giant magnetic resistance effect element or a tunnel type magnetic resistance effect element, comprising a laminated structure part at least having a free layer (4) formed of a soft magnetic material having a magnetization rotating according to an external field, a fixed layer (6) formed of a ferromagnetic material, an antiferromagnetic layer (7) fixing the magnetization of the fixed layer (6), and a spacer layer (5), i.e., a non-magnetic conductive layer or a tunnel barrier layer provided between the free layer and the fixed layer, the laminated structure part further comprising opposed side faces formed of one flat surface or one continuous curved surface at least across the free layer and the non-magnetic conductive layer or the tunnel barrier layer and the fixed layer in the laminated direction, whereby the positional relation of the element can be selected so that the field from a hard magnetic layer can surely stabilize the magnetization of the free layer (4), and the sensitiveness of the element can be increased and the production of the element can be facilitated by forming the widths of the layers substantially in the same pattern.

FURUKAWA AKIO (JP)
KAKIHARA YOSHIHIKO (JP)

PCT/JP2001/009734

May 16, 2002

November 07, 2001

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SONY CORP (JP)
FURUKAWA AKIO (JP)
KAKIHARA YOSHIHIKO (JP)

G01R33/09; G11B5/39; H01F10/08; H01F10/32; H01F41/18; H01L43/08; H01L43/12; G11B5/31; (IPC1-7): H01L43/08; G11B5/39; G01R33/09; H01F10/32

US5729410A	1998-03-17
JP2000228004A	2000-08-15
JP2000216456A	2000-08-04

Matsukuma, Hidemori (8-1 Nishishinjuku 1-chome Shinjuku-ku, Tokyo, JP)

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