Title:
MAGNETIC RESISTANCE ELEMENT AND MAGNETIC SENSOR USING SAME
Document Type and Number:
WIPO Patent Application WO/2015/029348
Kind Code:
A1
Abstract:
Provided is a structure that can suppress diffusion of B in a magnetic resistance element that has a layer that includes an alloy that contains B. In addition to including an alloy that contains B, the magnetic resistance element has: electrical resistance changing layers (5a, 5c, 5d) wherein electrical resistance is changed by means of a magnetic field; and capturing layers (6a, 6b, 13, 14) for capturing the B that the electrical resistance changing layers diffuse. As a result of this configuration, the B that is included in the electrical resistance changing layers becomes easy to capture inside the capturing layers and diffusion of the B to the exterior of the magnetic resistance element becomes difficult. Thereby, the problems that occur when the B diffuses to the exterior of the magnetic resistance element occur less easily.
Inventors:
YANO TOSHIFUMI (JP)
AO KENICHI (JP)
ANDO YASUO (JP)
OOGANE MIKIHIKO (JP)
NAKANO TAKAFUMI (JP)
AO KENICHI (JP)
ANDO YASUO (JP)
OOGANE MIKIHIKO (JP)
NAKANO TAKAFUMI (JP)
Application Number:
PCT/JP2014/004140
Publication Date:
March 05, 2015
Filing Date:
August 08, 2014
Export Citation:
Assignee:
DENSO CORP (JP)
UNIV TOHOKU (JP)
UNIV TOHOKU (JP)
International Classes:
H01L43/08; H01L43/10
Foreign References:
| JP2012060087A | 2012-03-22 | |||
| JP2008085208A | 2008-04-10 | |||
| JP2010127695A | 2010-06-10 | |||
| JP2014135449A | 2014-07-24 |
Other References:
ATSUSHI SUGIHARA ET AL.: "Preparation of nitride capping layers for an improvement of magnetic properties in a CoFeB/MgO-magnetic tunnel junction", THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS,IEICE TECHNICAL REPORT, vol. 112, no. 249, 11 October 2012 (2012-10-11), pages 37 - 42
Attorney, Agent or Firm:
KIN, Junhi (JP)
Gold Junki (JP)
Gold Junki (JP)
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