MAGNETIC SEMICONDUCTOR MATERIAL AND METHOD FOR PREPARATION THEREOF

Title:

MAGNETIC SEMICONDUCTOR MATERIAL AND METHOD FOR PREPARATION THEREOF

Document Type and Number:

WIPO Patent Application WO/2002/019352

Kind Code:

A1

Abstract:

A magnetic semiconductor material which comprises CdMnGeP¿2? and has magnetization characteristics at room temperature is prepared by placing a CdGeP¿2? single crystal (2) in a molecular beam epitaxy apparatus (1) and maintaining the temperature of the single crystal at 390 ° to thereby vapor-deposit Mn thereon in a thickness of 200 Å to 300 Å, and subjecting the resulting product to a heat treatment at 510 ° for one hour.

Inventors:

SATO KATSUAKI (JP)
MEDVEDKIN GENNADIY (JP)
ISHIBASHI TAKAYUKI (JP)

Application Number:

PCT/JP2001/007408

Publication Date:

March 07, 2002

Filing Date:

August 29, 2001

Export Citation:

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Assignee:

JAPAN SCIENCE & TECH CORP (JP)
SATO KATSUAKI (JP)
MEDVEDKIN GENNADIY (JP)
ISHIBASHI TAKAYUKI (JP)

International Classes:

C30B23/02; H01F10/193; H01F41/20; (IPC1-7): H01F10/193; H01F41/20; H01L27/10; H01L43/10; H01L43/12; C01G45/00; C30B29/10

Foreign References:

JPH0645248A

1994-02-18

Other References: