Title:
MAGNETIC SENSOR AND ITS PRODUCTION METHOD, FERROMAGNETIC TUNNEL JUNCTION DEVICE AND ITS PRODUCTION METHOD, AND MAGNETIC HEAD USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2000/052489
Kind Code:
A1
Abstract:
A magnetic sensor comprises (1) a support base, (2) a ferromagnetic tunnel junction device having a first magnetic layer on the support base, a tunnel insulating layer containing aluminum oxide, formed on the first magnetic layer by sputtering an aluminum target containing aluminum of 99.999% purity and oxidizing the aluminum film formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulating layer, and (3) a transducer for transducing a change of magnetic field to a change of resistance. The ferromagnetic tunnel junction device (2) can be alternatively a device in which the tunnel junction has an asymmetric voltage-resistance characteristic with respect to the direction in which voltage is applied. The insulating layer of the asymmetric voltage-resistance characteristic is formed by heat-treating an insulating layer material film, varying the partial pressure of oxygen in the atmosphere where an oxide insulating layer is formed, and using two or more film-forming target materials and a moving base.
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Inventors:
SATO MASASHIGE (JP)
KIKUCHI HIDEYUKI (JP)
KOBAYASHI KAZUO (JP)
KIKUCHI HIDEYUKI (JP)
KOBAYASHI KAZUO (JP)
Application Number:
PCT/JP2000/000351
Publication Date:
September 08, 2000
Filing Date:
January 25, 2000
Export Citation:
Assignee:
FUJITSU LTD (JP)
SATO MASASHIGE (JP)
KIKUCHI HIDEYUKI (JP)
KOBAYASHI KAZUO (JP)
SATO MASASHIGE (JP)
KIKUCHI HIDEYUKI (JP)
KOBAYASHI KAZUO (JP)
International Classes:
G01R33/06; H01F10/32; H01L43/08; G11B5/39; (IPC1-7): G01R33/09
Foreign References:
| JPH0870148A | 1996-03-12 | |||
| US5650958A | 1997-07-22 | |||
| JPH09269362A | 1997-10-14 |
Attorney, Agent or Firm:
Ishida, Takashi (Ishida & Associates Toranomon 37 Mori
Building 5-1 Toranomon 3-chome Minato-ku, Tokyo, JP)
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