Title:
MAGNETIC STORAGE UNIT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/184123
Kind Code:
A1
Abstract:
A magnetic storage unit and a magnetic memory. The magnetic storage unit sequentially comprises from bottom to top a first electrode, a transition combination layer, a magnetic tunnel junction, and a second electrode. The first electrode and the second electrode are connected to an external circuit, and control the resistance state of the magnetic tunnel junction. The transition combination layer comprises a boron supply layer and a boron adsorption buffer layer that are stacked. According to the present invention, the transition combination layer is provided, so that the problem of stress caused by the mismatch of a metal electrode and a lattice structure of the magnetic tunnel junction is eliminated, a better motherboard is provided for the growth of the magnetic tunnel junction, and the number of defects and the internal stress in the magnetic tunnel junction are reduced. In a high temperature environment, boron is diffused and adsorbed on the boron supply layer and the boron adsorption buffer layer, and the process can effectively slow down the interface diffusion of other film materials in the magnetic tunnel junction in the high temperature environment, thereby improving interface structure quality of the magnetic tunnel junction.
Inventors:
GONG JUNLU (CN)
JIAN HONG (CN)
SUN YIHUI (CN)
MENG FANTAO (CN)
JIAN HONG (CN)
SUN YIHUI (CN)
MENG FANTAO (CN)
Application Number:
PCT/CN2022/078967
Publication Date:
September 09, 2022
Filing Date:
March 03, 2022
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08
Foreign References:
| CN104823292A | 2015-08-05 | |||
| CN107394038A | 2017-11-24 | |||
| US20160163971A1 | 2016-06-09 | |||
| US20190051818A1 | 2019-02-14 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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