Title:
MAGNETIC STORAGE UNIT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/005319
Kind Code:
A1
Abstract:
The present invention provides a magnetic storage unit, comprising: a magnetic tunnel junction, a magnetic spin-orbit moment effect layer and a connection layer, wherein a free layer of the magnetic tunnel junction is vertically magnetized; the spin-orbit moment effect layer is arranged close to the free layer and has shape anisotropy; magnetostatic coupling is formed with the free layer by means of the shape anisotropy; the spin-orbit moment effect layer and the free layer have the same magnetization direction; when a current passes through the spin-orbit moment effect layer, the magnetization directions of the spin-orbit moment effect layer and the free layer are synchronously reversed; and the connection layer is arranged between the free layer and the spin-orbit moment effect layer.
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Inventors:
SHI YINUO (CN)
CHI KEQUN (CN)
LI ZHOU (CN)
ZHANG WENBIAO (CN)
MENG HAO (CN)
CHI KEQUN (CN)
LI ZHOU (CN)
ZHANG WENBIAO (CN)
MENG HAO (CN)
Application Number:
PCT/CN2022/091364
Publication Date:
February 02, 2023
Filing Date:
May 07, 2022
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
G11C11/16
Foreign References:
| CN112701216A | 2021-04-23 | |||
| CN111864060A | 2020-10-30 | |||
| CN112310274A | 2021-02-02 | |||
| CN111682106A | 2020-09-18 | |||
| US20170365777A1 | 2017-12-21 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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