Title:
MAGNETIC TUNNEL JUNCTION AND METHOD FOR REDUCING MAGNETIC TUNNEL JUNCTION FREE LAYER PROCESS FLUCTUATIONS
Document Type and Number:
WIPO Patent Application WO/2021/027404
Kind Code:
A1
Abstract:
The present invention provides a magnetic tunnel junction, at least comprising a reference layer, a barrier layer, a magnetic buffer layer, and a free layer sequentially stacked, wherein the magnetic buffer layer has a stronger ductility than the free layer. In the present invention, by adding a thin magnetic buffer layer on the surface of the barrier layer, a smoother substrate is provided due to the good ductility of the magnetic buffer layer so that a subsequently deposited free layer thin film has better uniformity and does not impair the TMR effect of the magnetic tunnel.
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Inventors:
SUN YIHUI (CN)
MENG FANTAO (CN)
MENG FANTAO (CN)
Application Number:
PCT/CN2020/098497
Publication Date:
February 18, 2021
Filing Date:
June 28, 2020
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L27/22; H01L43/08
Foreign References:
| US20110169111A1 | 2011-07-14 | |||
| US20110169111A1 | 2011-07-14 | |||
| US20040246634A1 | 2004-12-09 | |||
| CN101022032A | 2007-08-22 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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