Title:
MAGNETIC TUNNEL JUNCTION, MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREFOR, AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/183448
Kind Code:
A1
Abstract:
The present application provides a magnetic tunnel junction (MTJ), a magnetic random access memory and a manufacturing method therefor, and a storage device, which can avoid a short circuit problem caused by side wall reverse sputtering when the MTJ is manufactured. The MTJ comprises a first magnetic film, a tunneling layer, and a second magnetic film. The first magnetic film comprises a passivation portion and a non-passivation portion, wherein the passivation portion is formed on the periphery of the non-passivation portion, and the non-passivation portion is surrounded by the passivation portion (i.e. the non-passivation portion is located in a region enclosed by the passivation portion). The tunneling layer is provided on the surface of the non-passivation portion.
Inventors:
ZHOU XUE (CN)
QIN QING (CN)
LIU XI (CN)
ZHANG LIPING (CN)
QIN QING (CN)
LIU XI (CN)
ZHANG LIPING (CN)
Application Number:
PCT/CN2021/079145
Publication Date:
September 09, 2022
Filing Date:
March 04, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L43/08
Foreign References:
| CN105322089A | 2016-02-10 | |||
| CN108091359A | 2018-05-29 | |||
| CN111864059A | 2020-10-30 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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