Title:
MAGNETIC TUNNEL JUNCTION STACK STRUCTURE, MEMORY, AND NEURAL NETWORK COMPUTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/121572
Kind Code:
A1
Abstract:
The present invention provides a magnetic tunnel junction stack structure, comprising: a spin-orbit torque providing layer, a first free layer, a coupling layer, a second free layer, a barrier layer, and a reference layer which are sequentially stacked from bottom to top. One of the first free layer and the second free layer is in an in-plane magnetization mode, and the other is in a vertical magnetization mode. The magnetization mode of the reference layer is the same as that of the second free layer. The magnetization modes of the first free layer and the second free layer are configured to be different magnetization modes, and by means of the combination of the two, the present invention can adapt to various applications.
Inventors:
LI ZHOU (CN)
MENG HAO (CN)
CHI KEQUN (CN)
SHI YINUO (CN)
ZHANG WENBIAO (CN)
MENG HAO (CN)
CHI KEQUN (CN)
SHI YINUO (CN)
ZHANG WENBIAO (CN)
Application Number:
PCT/CN2021/128688
Publication Date:
June 16, 2022
Filing Date:
November 04, 2021
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L27/22; H01L43/08
Foreign References:
| CN111952442A | 2020-11-17 | |||
| CN103890855A | 2014-06-25 | |||
| CN111834521A | 2020-10-27 | |||
| CN111682106A | 2020-09-18 | |||
| US20200006636A1 | 2020-01-02 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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