Title:
MAGNETIC TUNNEL JUNCTION
Document Type and Number:
WIPO Patent Application WO/2021/000748
Kind Code:
A1
Abstract:
Provided is a magnetic tunnel junction, comprising a reference layer, a tunnel layer, a free layer, a covering layer, a polarization layer, and a first coupling layer that are sequentially arranged in a stacked manner, wherein the reference layer is magnetized in a vertical direction, the free layer is magnetized in the vertical direction, and the first coupling layer is magnetized in a horizontal direction; the first coupling layer is directly coupled to the polarization layer, the magnetization direction of the polarization layer deviates from the vertical direction by an angle, the component in the vertical direction is antiparallel to the magnetization direction of the reference layer, and the component in the horizontal direction is parallel to the magnetization direction of the first coupling layer; and both the reference layer and the polarization layer provide spin-polarized electrons to the free layer to provide spin-transfer torque for magnetization reversal of the free layer. The present invention can reduce a write current of the magnetic tunnel junction.
Inventors:
HE SHIKUN (CN)
YANG XIAOLEI (CN)
YANG XIAOLEI (CN)
Application Number:
PCT/CN2020/097105
Publication Date:
January 07, 2021
Filing Date:
June 19, 2020
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08; G11C11/16
Foreign References:
| CN102414756A | 2012-04-11 | |||
| CN106605311A | 2017-04-26 | |||
| US20100109111A1 | 2010-05-06 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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