Title:
MAGNETO-RESISTIVE ELEMENT, MAGNETIC MEMORY, AND ARTIFICIAL INTELLIGENCE SYSTEM
Document Type and Number:
WIPO Patent Application WO/2022/196741
Kind Code:
A1
Abstract:
Provided are: a magneto-resistive element in which the direction of magnetization in a recording layer can be efficiently reversed with low resistance and without reducing reversal efficiency by a write current flowing in a heavy metal layer; a magnetic memory; and an artificial intelligence system. A magneto-resistive element 10 includes: a heavy metal layer 11 that is formed by laminating Ir layers 12 and Pt layers 13; a recording layer 16 that is provided so as to be opposed to the heavy metal layer 11 and that is formed by containing a first ferromagnetic layer having reversible magnetization; a reference layer 18 that is formed by containing a second ferromagnetic layer in which the direction of magnetization is fixed; and a barrier layer 17 that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer and that is formed of an insulator. The direction of magnetization in the first ferromagnetic layer is reversed by a write current flowing in the heavy metal layer 11.
Inventors:
SAITO YOSHIAKI (JP)
IKEDA SHOJI (JP)
ENDOH TETSUO (JP)
IKEDA SHOJI (JP)
ENDOH TETSUO (JP)
Application Number:
PCT/JP2022/012083
Publication Date:
September 22, 2022
Filing Date:
March 16, 2022
Export Citation:
Assignee:
UNIV TOHOKU (JP)
International Classes:
H01F10/26; H01F10/32; H01L21/8239; H01L27/105; H01L29/82; H01L43/08; H01L43/10
Domestic Patent References:
| WO2016021468A1 | 2016-02-11 |
Foreign References:
| US20170229160A1 | 2017-08-10 | |||
| JP2017059634A | 2017-03-23 | |||
| US20170330070A1 | 2017-11-16 | |||
| JP2020155488A | 2020-09-24 |
Attorney, Agent or Firm:
MORITA Yoshinori (JP)
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