Title:
MAGNETORESISTANCE EFFECT DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/159396
Kind Code:
A1
Abstract:
A magnetoresistance effect device 1 is provided with a magnetoresistance effect element 2, and an external magnetic field application section 3 that applies an external magnetic field to the magnetoresistance effect element 2. The magnetoresistance effect element 2 includes a first ferromagnetic layer 21, a second ferromagnetic layer 23, and a spacer layer 22. The external magnetic field application section 3 includes a magnetization holding section 35 and a magnetization setting section 30. The magnetization setting section 30 has a function of setting, with respect to the magnetization holding section 35, magnetization to be used for the purpose of generating the external magnetic field, said magnetization being set by applying a magnetization setting magnetic field to the magnetization holding section 35, then, stopping the application of the magnetization setting magnetic field. The magnetization holding section 35 has a function of holding the set magnetization after the application of the magnetization setting magnetic field is stopped.
Inventors:
ITO KUNIYASU (JP)
HARA SHINJI (JP)
HARA SHINJI (JP)
Application Number:
PCT/JP2018/006131
Publication Date:
September 07, 2018
Filing Date:
February 21, 2018
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L29/82; H01L43/08; H03B15/00
Foreign References:
| JP2017028022A | 2017-02-02 | |||
| JP2017028433A | 2017-02-02 | |||
| JP2015179824A | 2015-10-08 | |||
| US9088243B2 | 2015-07-21 | |||
| US20110215800A1 | 2011-09-08 |
Other References:
K. KONISHI ET AL.: "Radio-frequency amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance", APPLIED PHYSICS LETTERS, vol. 102, no. 16, 25 April 2013 (2013-04-25), pages 162409-1 - 162409-4, XP012172649
Attorney, Agent or Firm:
HOSHIMIYA Katsumi et al. (JP)
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