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Title:
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTANCE EFFECT SENSOR
Document Type and Number:
WIPO Patent Application WO/2023/074440
Kind Code:
A1
Abstract:
In order to be able to detect a magnetic field of a magnetic object to be detected, even if the magnetic object touches a GMR sensor, the present invention provides a magnetoresistance effect element that has, upon a substrate, an antiferromagnetic layer, a ferromagnetic fixed layer, a non-magnetic intermediate layer, a ferromagnetic free layer, and a protective layer. The aspect ratio between the horizontal width and the length of the magnetoresistance effect element is 1:5 to 1:300. The magnetoresistance effect element has a linear shape having a horizontal width of 190–620 nm.

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Inventors:
ICHIMURA MASAHIKO (JP)
FUKATANI NAOTO (JP)
Application Number:
PCT/JP2022/038597
Publication Date:
May 04, 2023
Filing Date:
October 17, 2022
Export Citation:
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Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H10N50/10
Domestic Patent References:
WO2018155078A12018-08-30
Foreign References:
JP2017133889A2017-08-03
JP2021027189A2021-02-22
JP2005203774A2005-07-28
JP2004146614A2004-05-20
Attorney, Agent or Firm:
HIRAKI & ASSOCIATES (JP)
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