MAGNETORESISTANCE ELEMENT AND MAGNETORESISTANCE STORAGE ELEMENT AND MAGNETIC MEMORY

WIPO Patent Application WO/2002/099906

A1

A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non−magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second ferromagnetic layer, the non−magnetic layer, and an insulator so formed as to cover at least the side surfaces of the first ferromagnetic layer and the non−magnetic layer is formed so as to cover the peripheral edge of the surface of the first ferromagnetic layer, whereby it is possible to prevent a leakage current from flowing from the first electric conductor to a second electric conductor along the side surfaces of the first ferromagnetic layer, the non−magnetic layer and the second ferromagnetic layer, and to make uniform a bias current running from the first electric conductor to the second electric conductor to thereby restrict variations in magnetoresistance characteristics such as MR value and junction resistance.

ODAGAWA AKIHIRO (JP)
HIRAMOTO MASAYOSHI (JP)
MATSUKAWA NOZOMU (JP)
DEGUCHI MASAHIRO (JP)

PCT/JP2002/005494

December 12, 2002

June 04, 2002

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MATSUSHITA ELECTRIC IND CO LTD (JP)
ODAGAWA AKIHIRO (JP)
HIRAMOTO MASAYOSHI (JP)
MATSUKAWA NOZOMU (JP)
DEGUCHI MASAHIRO (JP)

G01R33/09; G11B5/39; G11C11/16; H01F10/32; H01L21/8246; H01L27/22; (IPC1-7): H01L43/08; H01L27/105; G11B5/39; G01R33/09; H01F10/32

JP2000340859A	2000-12-08
EP0953849A2	1999-11-03
EP1061592A2	2000-12-20
EP1182713A2	2002-02-27
JP2002092824A	2002-03-29

IKEUCHI SATO & PARTNER PATENT ATTORNEYS (OAP TOWER 8-30, Tenmabashi 1-chom, Kita-ku Osaka-shi Osaka, JP)

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