MAGNETORESISTANT ELEMENT

WIPO Patent Application WO/2003/092083

A1

A magnetoresistant element comprising a multilayer film structure comprising nonmagnetic layer (3) and, superimposed on both major surfaces thereof, a pair of ferromagnetic layers (1 and 2) wherein at interfaces with the nonmagnetic layer (3), the resistance values differ from each other depending on a relative angle of magnetization direction exhibited by the pair of ferromagnetic layers (1 and 2), at least one of the pair of ferromagnetic layers (1 and 2) at the region of within 2nm from the interface with the nonmagnetic layer (3) having a composition of the formula (M_xO_y)_1-zZ_z (in which Z represents at least one element selected from among Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag and Au; M represents at least one element selected from among the elements other than the above Z and O, including ferromagnetic metals; and x, y and z are numeric values satisfying the relationships: 0.33