Title:
MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR CRYSTALLIZING FERROMAGNETIC LAYER
Document Type and Number:
WIPO Patent Application WO/2021/124517
Kind Code:
A1
Abstract:
This magnetoresistive effect element (10) is provided with a first ferromagnetic layer (1), a second ferromagnetic layer (2), a non-magnetic layer (3) that is arranged between the first ferromagnetic layer and the second ferromagnetic layer, and additive-containing layers (4, 5) that are arranged at any positions in the stacking direction; at least one of the first ferromagnetic layer and the second ferromagnetic layer is formed of a Heusler alloy that contains at least one of boron and carbon, while being at least partially crystallized; and the additive-containing layers are non-magnetic layers which contain at least one of boron and carbon, and an element that is selected from the group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.
Inventors:
ICHIKAWA SHINTO (JP)
INUBUSHI KAZUUMI (JP)
NAKADA KATSUYUKI (JP)
INUBUSHI KAZUUMI (JP)
NAKADA KATSUYUKI (JP)
Application Number:
PCT/JP2019/049843
Publication Date:
June 24, 2021
Filing Date:
December 19, 2019
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01F10/26; H01L43/10; H01L21/8239; H01L27/105; H01L43/08
Foreign References:
| JP2010080650A | 2010-04-08 | |||
| JP2019057643A | 2019-04-11 | |||
| JP2018032805A | 2018-03-01 | |||
| JP2008085170A | 2008-04-10 | |||
| US20070065681A1 | 2007-03-22 |
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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