Title:
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/187800
Kind Code:
A1
Abstract:
Provided are a magnetoresistive element which has magnetic shape anisotropy and uses a recording layer having antiparallel coupling, and a magnetic memory. Said magnetoresistive element has a structure in which: a first magnetic layer (3) and a second magnetic layer (5) include a ferromagnetic material and are magnetically coupled in an antiparallel direction, and the magnetization direction can change to the direction perpendicular to the film surface; and a junction size D (nm) which is the length of the longest straight line on an end surface perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) have between them a relationship D < t1 and D ≤ t2, or a relationship D ≤ t1 and D < t2.
More Like This:
Inventors:
HONJO HIROAKI (JP)
ENDOH TETSUO (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
NISHIOKA KOICHI (JP)
ENDOH TETSUO (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
NISHIOKA KOICHI (JP)
Application Number:
PCT/JP2019/006150
Publication Date:
October 03, 2019
Filing Date:
February 19, 2019
Export Citation:
Assignee:
UNIV TOHOKU (JP)
International Classes:
H01L27/105; H01L21/8239; H01L43/08; H01L43/10
Domestic Patent References:
| WO2010137679A1 | 2010-12-02 | |||
| WO2015060239A1 | 2015-04-30 | |||
| WO2016139878A1 | 2016-09-09 | |||
| WO2017010549A1 | 2017-01-19 |
Foreign References:
| JP2007142364A | 2007-06-07 | |||
| JP2012199431A | 2012-10-18 | |||
| JP2017505533A | 2017-02-16 |
Attorney, Agent or Firm:
EICHI PATENT & TRADEMARK CORP. (JP)
Download PDF: