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Title:
MAGNETORESISTIVE ELEMENT, MEMORY DEVICE, AND ELECTRONIC APPLIANCE
Document Type and Number:
WIPO Patent Application WO/2024/062978
Kind Code:
A1
Abstract:
A magnetoresistive element according to one embodiment of the present disclosure comprises a multilayer structure, a memory layer disposed on the multilayer structure and changeable in magnetization direction, a nonmagnetic layer disposed on the memory layer, and a reference layer disposed on the nonmagnetic layer and having a fixed magnetization direction. The multilayer structure comprises magnetic layers changeable in magnetization direction and nonmagnetic metal layers disposed on the magnetic layers.

Inventors:
ENDO MASAKI (JP)
Application Number:
PCT/JP2023/033216
Publication Date:
March 28, 2024
Filing Date:
September 12, 2023
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/82; G11B5/39; H10B61/00; H10N50/10
Domestic Patent References:
WO2019159962A12019-08-22
Foreign References:
JP2018157108A2018-10-04
US20200075670A12020-03-05
JP2021090041A2021-06-10
US20190305212A12019-10-03
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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