Title:
MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/073790
Kind Code:
A1
Abstract:
Provided are magnetic memory elements that have 4F2 size memory cells that realize cross-point memory.
In a magnetic memory element (100), a first magnetic layer (22), a third magnetic layer (spin polarized layer) (27), an intermediate layer (21), a fourth magnetic layer (spin polarized layer) (26), and a second magnetic layer (20) are laminated in this order. The intermediate layer (21) is made of an insulator or a non-magnetic material. The second magnetic layer (20) is made of a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt or a binary alloy of terbium and cobalt, or the first magnetic layer (22) is made of a ternary alloy of terbium, iron and cobalt or a binary alloy of terbium and cobalt.
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Inventors:
YAMADA MICHIYA (JP)
OGIMOTO YASUSHI (JP)
OGIMOTO YASUSHI (JP)
Application Number:
PCT/JP2009/067237
Publication Date:
July 01, 2010
Filing Date:
October 02, 2009
Export Citation:
Assignee:
FUJI ELECTRIC HOLDINGS (JP)
YAMADA MICHIYA (JP)
OGIMOTO YASUSHI (JP)
YAMADA MICHIYA (JP)
OGIMOTO YASUSHI (JP)
International Classes:
H01L43/08; H01F10/16; H01F10/32; H01L21/8246; H01L27/105
Foreign References:
| JP2007142364A | 2007-06-07 | |||
| JP2006269866A | 2006-10-05 | |||
| JP2001257395A | 2001-09-21 | |||
| JP2005503669A | 2005-02-03 | |||
| JP2004179483A | 2004-06-24 | |||
| JP2006128579A | 2006-05-18 | |||
| JPH06302031A | 1994-10-28 |
Other References:
SENJI SHIMANUKI ET AL.: "2 Jigen Doji Magnetron Sputter-ho ni yori Sakusei shita TbCo-maku no Jiki Oyobi Jiki Kogaku Tokusei", JOURNAL OF MAGNETICS SOCIETY OF JAPAN, vol. 10, no. 2, 31 March 1986 (1986-03-31), pages 179 - 182
D.D. DJAYAPRAWIRE ET AL.: "230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions", APPLIED PHYSICS LETTERS, vol. 86, 2005, pages 092502
J. HAYAKAWA ET AL.: "Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with .CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, 2006, pages 1057 - 1060
D.H. LEE ET AL.: "Increase of temperature due to Joule heating during current-induced magnetization switching of an MgO-based magnetic. tunnel junction", APPLIED PHYSICS LETTERS, vol. 92, 2008, pages 233502
See also references of EP 2375464A4
D.D. DJAYAPRAWIRE ET AL.: "230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions", APPLIED PHYSICS LETTERS, vol. 86, 2005, pages 092502
J. HAYAKAWA ET AL.: "Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with .CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, 2006, pages 1057 - 1060
D.H. LEE ET AL.: "Increase of temperature due to Joule heating during current-induced magnetization switching of an MgO-based magnetic. tunnel junction", APPLIED PHYSICS LETTERS, vol. 92, 2008, pages 233502
See also references of EP 2375464A4
Attorney, Agent or Firm:
OKUYAMA, Shoichi et al. (JP)
Okuyama In addition, it is 1. (JP)
Okuyama In addition, it is 1. (JP)
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