Title:
MAGNETORESISTIVE ELEMENT, METHOD FOR MANUFACTURING SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2010/029701
Kind Code:
A1
Abstract:
A magnetoresistive element having a higher MR ratio than conventional ones and a method for manufacturing the magnetoresistive element.
The magnetoresistive element comprises a substrate, a crystalline first ferromagnetic layer, a tunnel barrier layer, a crystalline second ferromagnetic layer, a non-magnetic intermediate layer, and a crystalline third ferromagnetic layer. The first ferromagnetic layer is composed of an alloy containing Co atoms, Fe atoms and B atoms; the tunnel barrier layer has a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer; the second ferromagnetic layer is composed of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms; and the third ferromagnetic layer is composed of a layer which is composed of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms, and a layer which is composed of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms.
Inventors:
KURIBAYASHI MASAKI (JP)
DJAYAPRAWIRA DAVID DJULIANTO (JP)
DJAYAPRAWIRA DAVID DJULIANTO (JP)
Application Number:
PCT/JP2009/004247
Publication Date:
March 18, 2010
Filing Date:
August 31, 2009
Export Citation:
Assignee:
CANON ANELVA CORP (JP)
KURIBAYASHI MASAKI (JP)
DJAYAPRAWIRA DAVID DJULIANTO (JP)
KURIBAYASHI MASAKI (JP)
DJAYAPRAWIRA DAVID DJULIANTO (JP)
International Classes:
H01L43/08; C23C14/06; G11B5/39; H01F10/16; H01F10/32; H01L21/8246; H01L27/105; H01L43/10; H01L43/12
Foreign References:
| JP2007294737A | 2007-11-08 | |||
| JP2004172599A | 2004-06-17 | |||
| JP2008085170A | 2008-04-10 | |||
| JP2002204002A | 2002-07-19 | |||
| JP2004349687A | 2004-12-09 |
Attorney, Agent or Firm:
WATANABE, Keisuke et al. (JP)
Keisuke Watanabe (JP)
Keisuke Watanabe (JP)
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