Title:
MAGNETORESISTIVE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2002/093661
Kind Code:
A1
Abstract:
In a tunnel magnetoresistive (TMR) element, the MR ratio is improved and fluctuation of resistance is suppressed. In an example of TMR element, a surface control layer which is an amorphous conductor, for example, is provided between a substrate and a tunnel layer. Moreover, in another example, at least one of two magnetic layers sandwiching the tunnel layer has polycrystalline structure having a crystal orientation surface controlled by other than a close-packed surface. In still another example, at least one of the two magnetic layers contains at least one magnetic element and an element other than the magnetic elements and has an average number of electrons calculated from the composition ratio adjusted to be not smaller than 23.5 and not greater than 25.5 or not smaller than 26.5 and not greater than 36. In a still further example, a surplus element capture layer containing an alloy or compound containing surplus element is formed and the content ratio of the surplus element is higher in the surplus element capture layer than in the two magnetic layers.
Inventors:
HIRAMOTO MASAYOSHI (JP)
MATSUKAWA NOZOMU (JP)
ODAGAWA AKIHIRO (JP)
IIJIMA KENJI (JP)
SAKAKIMA HIROSHI (JP)
MATSUKAWA NOZOMU (JP)
ODAGAWA AKIHIRO (JP)
IIJIMA KENJI (JP)
SAKAKIMA HIROSHI (JP)
Application Number:
PCT/JP2002/004589
Publication Date:
November 21, 2002
Filing Date:
May 13, 2002
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
HIRAMOTO MASAYOSHI (JP)
MATSUKAWA NOZOMU (JP)
ODAGAWA AKIHIRO (JP)
IIJIMA KENJI (JP)
SAKAKIMA HIROSHI (JP)
HIRAMOTO MASAYOSHI (JP)
MATSUKAWA NOZOMU (JP)
ODAGAWA AKIHIRO (JP)
IIJIMA KENJI (JP)
SAKAKIMA HIROSHI (JP)
International Classes:
G01R33/06; G01R33/09; G11B5/39; H01F10/32; H01L43/08; (IPC1-7): H01L43/08; G01R33/09; G11B5/39; H01F10/32
Foreign References:
| JP2001068760A | 2001-03-16 | |||
| JPH11134620A | 1999-05-21 | |||
| JP2001036165A | 2001-02-09 | |||
| JPH02290937A | 1990-11-30 | |||
| JPH09186375A | 1997-07-15 | |||
| JP2000357828A | 2000-12-26 | |||
| JP2001325704A | 2001-11-22 |
Attorney, Agent or Firm:
IKEUCHI SATO & PARTNER PATENT ATTORNEYS (OAP TOWER 8-30, Tenmabashi 1-chome, Kita-k, Osaka-shi Osaka, JP)
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