MAGNETORESISTIVE MEMORY CELL COMPRISING A DYNAMIC REFERENCE LAYER

Title:

MAGNETORESISTIVE MEMORY CELL COMPRISING A DYNAMIC REFERENCE LAYER

Document Type and Number:

WIPO Patent Application WO2003049120

Kind Code:

A3

Abstract:

The invention relates to a system for increasing the relative resistance difference of a magnetoresistive memory cell (17) that comprises one memory layer (1) and one reference layer (3) each on both sides of a tunnel barrier (2). Said reference layer (3) is configured as a soft-magnetic layer and the magnetization thereof which can be influenced by write processes is rectified by a reference support field or a reference magnetization flux (11).

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Inventors:

BANGERT JOACHIM (DE)

Application Number:

PCT/DE2002/004323

Publication Date:

February 05, 2004

Filing Date:

November 25, 2002

Export Citation:

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Assignee:

INFINEON TECHNOLOGIES AG (DE)
BANGERT JOACHIM (DE)

International Classes:

G11C11/15; G11C11/16; H01L21/8246; H01L27/105; H01L43/08; (IPC1-7): G11C11/16; G11C11/15

Foreign References:

EP1296331A2	2003-03-26
EP0875901A2	1998-11-04

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