Title:
MANUFACTURING METHOD OF CU-BASED RESISTIVE RANDOM ACCESS MEMORY, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2017/181417
Kind Code:
A1
Abstract:
Disclosed are a manufacturing method of a Cu-based resistive random access memory, and a memory. The manufacturing method comprises: forming a copper wire in a groove by means of a damascene process for forming a copper interconnection, the copper wire comprising a lower copper electrode for growing a storage medium, and the copper wire being disposed above a first capping layer; forming a second capping layer above the copper wire; forming a hole at the second capping layer in a location corresponding to the lower copper electrode, the hole being used to expose the lower copper electrode; chemically reacting a pattern of the lower copper electrode to form a compound barrier layer, the compound barrier layer being a compound formed by combining elements Cu, Si and N, or a compound formed by combining elements Cu, Ge and N; and depositing a solid electrolyte material and an upper electrode on the compound barrier layer. The above technical solution solves a technical problem in which existing Cu-based resistive random access memories have high Cu ion injection efficiency, thereby enhancing a fatigue characteristic of a memory.
Inventors:
LV HANGBING (CN)
LIU MING (CN)
LIU QI (CN)
LONG SHIBING (CN)
LIU MING (CN)
LIU QI (CN)
LONG SHIBING (CN)
Application Number:
PCT/CN2016/080021
Publication Date:
October 26, 2017
Filing Date:
April 22, 2016
Export Citation:
Assignee:
THE INST OF MICROELECTRONICS OF CHINESE ACAD OF SCIENCES (CN)
International Classes:
H01L45/00; G11C11/56; H01L21/82; H01L27/24
Foreign References:
| CN105789438A | 2016-07-20 | |||
| CN105514264A | 2016-04-20 | |||
| CN101834274A | 2010-09-15 | |||
| CN101572291A | 2009-11-04 |
Attorney, Agent or Firm:
BEIJING BRIGHT & RIGHT LAW FIRM (CN)
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