MANUFACTURING METHOD OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

WIPO Patent Application WO/2013/062104

A1

A method for manufacturing a reflective mask blank for EUVL is provided to enable eliminating warping on the chuck surface side of the glass substrate caused by the temperature difference in the thickness direction of the glass substrate during EUVL execution, and the separation of the glass substrate from the holding means caused by the warping. A method for manufacturing a reflective mask blank for EUV lithography (EUVL) that successively forms at least a reflective layer for reflecting the EUV light and an absorption layer for absorbing EUV light on the film deposition surface of a glass substrate, and forms a conductive film on the back surface of said glass substrate. When the degree of flatness on the back surface side of the reflective mask blank for EUVL under the same conditions as during EUV lithography determined by the following equation is set to ZEUVL (nm), the method for manufacturing a reflective mask blank for EUVL features adjusting the initial degree of flatness Z0 (nm) on the back surface side of a reflective mask blank for EUVL so that the absolute value of the ZEUVL is less than 600 nm. ZEUVL = Z0 + Δ (where Δ is the amount of warping (nm) of the glass substrate under the same conditions as during EUV lithography)

JP2015531994	Uniform masking for wafer dicing using laser and plasma etching
JPH02962	FORMATION OF PHOTOMASK

IKUTA YOSHIAKI (JP)

PCT/JP2012/077785

May 02, 2013

October 26, 2012

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ASAHI GLASS CO LTD (JP)

H01L21/027; G03F1/24

JP2011151386A	2011-08-04
JP2010163345A	2010-07-29
JP2009088166A	2009-04-23

SENMYO, Kenji et al. (JP)
Spring name Kenji (JP)

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