Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/142128
Kind Code:
A1
Abstract:
A magnetic memory and a read/write method therefor. The magnetic memory comprises: at least one unit layer (100), the unit layer (100) comprising several parallel first wires (110) and second wires (120), the first wires (110) being located within a first plane, the second wires (120) being located within a second plane, the first plane being parallel to the second plane, and projections of the second wires (120) on the first plane intersecting the first wires (110); and several storage elements (130), provided between the first plane and the second plane, the storage elements (130) each comprising a magnetic tunnel junction (131) and a bidirectional gating device (132) that are connected in series in the direction perpendicular to the first plane, the magnetic tunnel junctions (131) being connected to the first wires (110), the bidirectional gating devices (132) being connected to the second wires (120), and the bidirectional gating devices (132) being configured to be turned on when being applied with a threshold voltage and/or threshold current. The magnetic memory and the read/write method therefor change the design of conventional magnetic memories, and greatly improve the storage density and storage speed.
Inventors:
WU BAOLEI (CN)
WANG XIAOGUANG (CN)
WU YULEI (CN)
WANG XIAOGUANG (CN)
WU YULEI (CN)
Application Number:
PCT/CN2021/097951
Publication Date:
July 07, 2022
Filing Date:
June 02, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C11/16; G11C11/15; H01L43/08
Domestic Patent References:
| WO2020167405A1 | 2020-08-20 |
Foreign References:
| CN105448320A | 2016-03-30 | |||
| CN105449099A | 2016-03-30 | |||
| US20170104028A1 | 2017-04-13 | |||
| US20180019392A1 | 2018-01-18 |
Attorney, Agent or Firm:
BEIJING LINKAW PATENT ATTORNEY LAW FIRM (CN)
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