Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/029398
Kind Code:
A1
Abstract:
Embodiments of the present application disclose a manufacturing method for a semiconductor structure, the semiconductor structure, and a semiconductor memory. The manufacturing method comprises: providing a substrate; sequentially forming an MTJ structure and a first mask structure on the substrate; patterning the first mask structure to form a first pattern extending in a first direction; forming a second mask structure over the first pattern; patterning the second mask structure to form a second pattern extending in a second direction, wherein the first direction intersects with the second direction, and the first direction is not perpendicular to the second direction; patterning the first pattern by using the second pattern to form a honeycomb pattern; and transferring the honeycomb pattern to the MTJ structure to form a honeycomb MTJ array. In this case, because the honeycomb MTJ array has high density, the memory density of the semiconductor memory can be improved when the semiconductor memory is formed.
Inventors:
CAO KANYU (CN)
WANG XIAOGUANG (CN)
LI HUIHUI (CN)
ZENG DINGGUI (CN)
DENG JIEFANG (CN)
WANG XIAOGUANG (CN)
LI HUIHUI (CN)
ZENG DINGGUI (CN)
DENG JIEFANG (CN)
Application Number:
PCT/CN2022/077718
Publication Date:
March 09, 2023
Filing Date:
February 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H01L43/12; H01L43/08
Foreign References:
| CN112563409A | 2021-03-26 | |||
| CN108931882A | 2018-12-04 | |||
| CN112309986A | 2021-02-02 | |||
| CN112514070A | 2021-03-16 | |||
| US20110076784A1 | 2011-03-31 | |||
| US20210083180A1 | 2021-03-18 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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