Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/045265
Kind Code:
A1
Abstract:
Provided are a semiconductor structure and a manufacturing method therefor. The manufacturing method comprises: providing a substrate (100); on the surface of the substrate (100), forming stack structures (110) arranged at intervals along a first direction (X) and first isolation layers (120) located between adjacent stack structures (110), wherein each stack structure (110) comprises a first interlayer dielectric layer (130), an initial active layer (140) and a second interlayer dielectric layer (150); etching part of each initial active layer (140) to form a first trench (160); forming an oxide semiconductor layer (170) in each first trench (160), each oxide semiconductor layer (170) coming into contact with the reserved initial active layer (140); and etching part of each oxide semiconductor layer (170) and the reserved initial active layers (140) to form active structures (180) arranged in an array along the first direction (X) and a second direction (Y), wherein the first direction (X) is perpendicular to the surface of the substrate (100), and the second direction (Y) is parallel with the surface of the substrate (100). Therefore, the mobility of carriers of the semiconductor structure can be improved.
Inventors:
TANG YI (CN)
Application Number:
PCT/CN2022/124149
Publication Date:
March 07, 2024
Filing Date:
October 09, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/105; H01L21/82
Foreign References:
| CN114864503A | 2022-08-05 | |||
| CN114927477A | 2022-08-19 | |||
| CN114914202A | 2022-08-16 | |||
| CN112992904A | 2021-06-18 | |||
| CN113745224A | 2021-12-03 | |||
| CN114023703A | 2022-02-08 | |||
| US20190296155A1 | 2019-09-26 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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