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Title:
MANUFACTURING METHOD FOR AND STRUCTURE OF IGBT DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/206794
Kind Code:
A1
Abstract:
The present invention provides a manufacturing method for and structure of an IGBT device. The method comprises: providing a substrate, the substrate comprising an active region, a transition region, and a termination region which comprise first main surfaces and second main surfaces that are opposite to each other; performing first ion implantation on the first main surfaces of the transition region and the termination region to form a doped termination layer crossing the transition region and the termination region, performing second ion implantation on the edge of the termination region to form a stop ring, and then performing thermal process propulsion processing; etching the first main surface of the termination region to form a trench in communication with the doped termination layer and the stop ring, and forming a field oxide layer in the trench; performing second general ion injection on the first main surfaces to form a carrier storage doped region, and then performing thermal process propulsion processing; and forming a front structure and a back structure. In the present invention, general injection can be performed when manufacturing the carrier storage doped region in the active region, without a mask, so as to save the manufacturing cost and avoid the large influence of a carrier storage layer on the withstand voltage of an IGBT at the same time.

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Inventors:
CAO GONGXUN (CN)
LANG JINRONG (CN)
LIU JIANHUA (CN)
Application Number:
PCT/CN2022/102329
Publication Date:
November 02, 2023
Filing Date:
June 29, 2022
Export Citation:
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Assignee:
GTA SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L21/331; H01L21/266; H01L29/36; H01L29/739
Foreign References:
CN113571415A2021-10-29
CN111509035A2020-08-07
CN112071756A2020-12-11
US20190006513A12019-01-03
CN111463270A2020-07-28
CN113451398A2021-09-28
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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