Title:
MANUFACTURING METHODS OF SEMICONDUCTOR STRUCTURE AND MEMORY, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2021/233156
Kind Code:
A1
Abstract:
A manufacturing method of a semiconductor structure comprises: forming a hardmask (2) on a semiconductor substrate (1); forming a photoresist film (3) on the hardmask (2); patterning the photoresist film (3), and forming a patterned photoresist layer (32) having first openings (101) and second openings (102), wherein the second opening (102) is positioned at an interval between the first openings (101); using the patterned photoresist layer (32) as a mask to etch the hardmask (2), and forming a patterned hardmask layer (21) having multiple third openings (103) corresponding to the first openings (101) and the second openings (102); and using the patterned hardmask layer (21) as a mask to etch the semiconductor substrate (1), and forming holes along the third openings (103). The invention improves the efficiency of hole formation and the quality of formed holes at the same time.
Inventors:
HU JIANCHENG (CN)
HSIEH MINGHUNG (CN)
HSIEH MINGHUNG (CN)
Application Number:
PCT/CN2021/092906
Publication Date:
November 25, 2021
Filing Date:
May 10, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/027; H01L21/8242; H01L21/8244; H01L27/108; H01L27/11
Foreign References:
| US20130295772A1 | 2013-11-07 | |||
| US20150104887A1 | 2015-04-16 | |||
| US20130017637A1 | 2013-01-17 | |||
| CN101556437A | 2009-10-14 | |||
| CN102419513A | 2012-04-18 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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