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Title:
MASK ASSEMBLY, PHOTOLITHOGRAPHIC DEVICE, AND PHOTOLITHOGRAPHIC METHOD
Document Type and Number:
WIPO Patent Application WO/2024/012128
Kind Code:
A1
Abstract:
A mask assembly (10), a photolithographic device, and a photolithographic method. By means of a double exposure process, a process window is improved. The mask assembly (10) comprises a first mask (11) and a second mask (12). The first mask (11) is used for performing first exposure on a portion, within a forbidden pitch, of a positive photoresist (22) on a layer (21) to be etched to obtain a first photoresist pattern (221). The first mask (11) comprises alternating first light-transmitting patterns (111) and first scattering patterns (112). The second mask (12) is used for performing second exposure on the first photoresist pattern (221) to obtain a second photoresist pattern (222). The second mask (12) comprises alternating second light-transmitting patterns (121) and second scattering patterns (122). The portion subjected to the first exposure and the portion subjected to the second exposure in the second photoresist pattern (222) are alternately arranged at intervals, and the width of the first light-transmitting patterns (111) and the width of the second light-transmitting patterns (121) are the same; and said layer (21) comprises a portion to be removed within the forbidden pitch, and the pattern pitch of the first light-transmitting patterns (111) and the pattern pitch of the second light-transmitting patterns (121) are both twice the pattern pitch of the portions, in the portion to be removed, corresponding to the first light-transmitting patterns (111) and the second light-transmitting patterns (121).

Inventors:
YUAN WENXU (CN)
CHEN MAX (CN)
Application Number:
PCT/CN2023/099914
Publication Date:
January 18, 2024
Filing Date:
June 13, 2023
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G03F1/00; G03F1/36; G03F7/20
Foreign References:
US20020150841A12002-10-17
US20180024443A12018-01-25
US20160299420A12016-10-13
CN106154757A2016-11-23
JPH06252031A1994-09-09
US20030143470A12003-07-31
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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