Title:
MASK BLANK MANUFACTURING METHOD, MASK BLANK, PHOTOMASK MANUFACTURING METHOD, AND PHOTOMASK
Document Type and Number:
WIPO Patent Application WO/2022/004456
Kind Code:
A1
Abstract:
The purpose of the present invention is to solve problems of accuracy deterioration in the shape of a formed pattern which is caused by an increase in pattern thickness resulting from increase in thickness of an oxide layer formed on a surface layer of a mask layer including molybdenum when a laser is applied thereonto in an exposure step, and occurrence of a case where a mask layer of desired film characteristics cannot be obtained if a sputter target of high specific resistance is used, and to further increase the etching speed of the mask layer in a pattern forming step. A mask blank manufacturing method according to the present invention involves forming a mask layer containing silicon on a transparent substrate through sputtering using a target that includes a dopant for reducing specific resistance (S12).
Inventors:
SUZUKI TOSHIHIRO (JP)
HOSOYA MORIO (JP)
KANAI SHUICHIRO (JP)
NAKAUNE OSAMU (JP)
HOSOYA MORIO (JP)
KANAI SHUICHIRO (JP)
NAKAUNE OSAMU (JP)
Application Number:
PCT/JP2021/023360
Publication Date:
January 06, 2022
Filing Date:
June 21, 2021
Export Citation:
Assignee:
ULVAC COATING CORP (JP)
International Classes:
G03F1/32; G03F1/38; G03F1/54; G03F1/58
Foreign References:
| JP2018194830A | 2018-12-06 | |||
| JP2018194829A | 2018-12-06 | |||
| JP2014222352A | 2014-11-27 | |||
| JPH0695363A | 1994-04-08 | |||
| JPS5431281A | 1979-03-08 |
Attorney, Agent or Firm:
OIKAWA Shu et al. (JP)
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