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Title:
MASK BLANK, PHASE SHIFT MASK, HALF-TONE MASK, MASK BLANK MANUFACTURING METHOD, AND PHASE SHIFT MASK MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/003486
Kind Code:
A1
Abstract:
This mask blank is provided with: a transparent substrate; a phase shift layer laminated on the surface of the transparent substrate, said phase shift layer having Cr as a major component; an etching stopper layer laminated on the phase shift layer; and a light blocking layer laminated on the etching stopper layer, said light blocking layer having Cr as a major component. The phase shift layer, the etching stopper layer, and the light blocking layer are etched using a same etchant, thereby enabling to manufacture a phase shift mask wherein an edge of a light blocking pattern formed in the light blocking layer is disposed, in a plan view, at a position retracted from an edge of a phase shift pattern laminated on the phase shift layer.

Inventors:
NOGUCHI YASUNORI (JP)
ISO HIROYUKI (JP)
MOCHIZUKI SATORU (JP)
KAGEYAMA KAGEHIRO (JP)
MOROSAWA NARIHIRO (JP)
Application Number:
PCT/JP2018/004172
Publication Date:
January 03, 2019
Filing Date:
February 07, 2018
Export Citation:
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Assignee:
ULVAC COATING CORP (JP)
International Classes:
G03F1/00; G03F1/26
Domestic Patent References:
WO2014171512A12014-10-23
WO2013190786A12013-12-27
Foreign References:
JP2014211501A2014-11-13
JP2013231998A2013-11-14
US20070076833A12007-04-05
JPH08272071A1996-10-18
Attorney, Agent or Firm:
OIKAWA Shu et al. (JP)
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