Title:
MASK-LAYER-FREE JOINT PASSIVATION BACK CONTACT BATTERY AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/077795
Kind Code:
A1
Abstract:
A mask-layer-free joint passivation back contact battery and a preparation method therefor. The method comprises the following steps: S101, providing a silicon wafer substrate (10); S102, sequentially forming a first semiconductor layer and a mask layer (13) on the back surface of the silicon wafer substrate (10), the first semiconductor layer comprising a tunneling oxide layer (11) and a first doped polycrystalline layer (12); S103, performing first etching on the first semiconductor layer on the obtained back surface to form a first opening area W1; S104, forming a textured surface in the first opening area W1 on the back surface by means of texturing and cleaning; S105, removing the mask layer (13); S106, forming a second semiconductor layer on the obtained back surface; and S107, performing second etching in a polished area of the obtained back surface. The method uses a post-texturing method and directly forms the second semiconductor layer on a surface of the first semiconductor layer; the adhesion is strong, such that disengagement and peeling are avoided, the production yield is high, and the product reliability is high.
Inventors:
LIN KAIRUI (CN)
Application Number:
PCT/CN2022/143758
Publication Date:
April 18, 2024
Filing Date:
December 30, 2022
Export Citation:
Assignee:
GOLDEN SOLAR QUANZHOU NEW ENERGY TECH CO LTD (CN)
International Classes:
H01L31/20; H01L31/0216; H01L31/0368; H01L31/077
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
Download PDF: