Title:
MASK REPAIR WITH ELECTRON BEAM-INDUCED CHEMICAL ETCHING
Document Type and Number:
WIPO Patent Application WO2003003118
Kind Code:
A3
Abstract:
The present invention discloses a method of fabricating and repairing a mask without damage and an apparatus including a holder to mount a substrate; a stage to position the holder in a chamber; a pumping system to evacuate the chamber; an imaging system to locate an opaque defect in the substrate; a gas delivery system to dispense a reactant gas towards the defect; and an electron delivery system to direct electrons towards the opaque defect.
Inventors:
LIANG SHOUDENG
STIVERS ALAN
STIVERS ALAN
Application Number:
PCT/US2002/020016
Publication Date:
October 09, 2003
Filing Date:
June 21, 2002
Export Citation:
Assignee:
INTEL CORP (US)
International Classes:
C23C16/04; G03F1/72; H01J37/305; H01L21/027; H01L21/00; (IPC1-7): G03F1/00
Foreign References:
| US5482802A | 1996-01-09 | |||
| US6038015A | 2000-03-14 | |||
| EP0334680A2 | 1989-09-27 | |||
| US6114073A | 2000-09-05 | |||
| EP0298495A2 | 1989-01-11 | |||
| US4256778A | 1981-03-17 |
Other References:
See also references of EP 1402316A2
Download PDF:
Previous Patent: STABILIZED CD-4 ONE-PART FILM DEVELOPER CONCENTRATES
Next Patent: REPAIR OF AMPLITUDE DEFECTS IN A MULTILAYER COATING
Next Patent: REPAIR OF AMPLITUDE DEFECTS IN A MULTILAYER COATING