Title:
MATERIAL FOR FORMING TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2002/040422
Kind Code:
A1
Abstract:
A transparent electroconductive film which comprises a material containing indium oxide as a primary component, 0.1 to 5.0 wt % of germanium oxide and 0.1 to 5.0 wt % of silicon oxide. The transparent electroconductive film can be manufactured by a method comprising preparing a sputtering target and forming a thin film by the sputtering method through the use of the sputtering target. The transparent electroconductive film exhibits improved efficient properties and can be manufactured at a low cost.
Inventors:
JINUSHI KEIICHIRO (JP)
Application Number:
PCT/JP2001/009982
Publication Date:
May 23, 2002
Filing Date:
November 15, 2001
Export Citation:
Assignee:
FURUYA METAL CO LTD (JP)
JINUSHI KEIICHIRO (JP)
JINUSHI KEIICHIRO (JP)
International Classes:
H01L51/50; C03C17/245; C04B35/00; C04B35/01; C23C14/08; C23C14/24; C23C14/34; G09F9/30; H01B1/08; H01B5/14; H01H1/02; H01H11/00; H01L31/0224; H01L31/04; H01L31/18; H05B33/28; (IPC1-7): C04B35/00; C23C14/08; C23C14/34; G02F1/1343; G09F9/30; H01J9/02; H01J11/02; H01L21/285; H01L31/04
Foreign References:
| JPH0971860A | 1997-03-18 | |||
| US5972527A | 1999-10-26 | |||
| US6078139A | 2000-06-20 | |||
| JPH11345570A | 1999-12-14 | |||
| JP2000049368A | 2000-02-18 | |||
| JPH10190028A | 1998-07-21 | |||
| JPH06150741A | 1994-05-31 | |||
| JPH11316383A | 1999-11-16 | |||
| JPH1128781A | 1999-02-02 | |||
| JPH1167459A | 1999-03-09 |
Attorney, Agent or Firm:
Yanase, Mutsuyasu (Takadanobaba Shinjuku-ku, Tokyo, JP)
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