Title:
MATERIAL FOR PHOTOELECTRIC CONVERSION ELEMENT FOR IMAGING
Document Type and Number:
WIPO Patent Application WO/2022/114063
Kind Code:
A1
Abstract:
Provided are a material for achieving increases in the sensitivity and resolution of a photoelectric conversion element for imaging, and a photoelectric conversion element for imaging using the material. The photoelectric conversion element for imaging comprises, in a photoelectric conversion layer or a hole blocking layer, for example, a material for a photoelectric conversion element for imaging represented by a general formula (1). In the general formula (1), m is an integer of 1 to 3, and Y is N, C-H, C-R1, C- or C-R3, where at least one Y is C-R3 and R3 is represented by a formula (2). X indicates N or C-R2.
Inventors:
KAWADA ATSUSHI (JP)
INOUE MUNETOMO (JP)
HAYASHI KENTARO (JP)
INOUE MUNETOMO (JP)
HAYASHI KENTARO (JP)
Application Number:
PCT/JP2021/043212
Publication Date:
June 02, 2022
Filing Date:
November 25, 2021
Export Citation:
Assignee:
NIPPON STEEL CHEMICAL & MAT CO LTD (JP)
International Classes:
H01L51/42; H01L27/146; H01L27/30; H01L31/10
Domestic Patent References:
| WO2014050902A1 | 2014-04-03 |
Foreign References:
| JP2017178911A | 2017-10-05 |
Other References:
CHEN XI, BAI FU-QUAN, WANG HAI-TAO, ZHANG HONG-XING, TANG YONGAN: "The impact of molecular stacking interactions on the electronic structure and charge transport properties in distyrylbenzene (DSB-) based D–A complexes: a theoretical study", RSC ADVANCES, vol. 5, no. 59, 1 January 2015 (2015-01-01), pages 47681 - 47691, XP055933918, DOI: 10.1039/C5RA06497J
Attorney, Agent or Firm:
SASAKI Kazuya et al. (JP)
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