Title:
MATRIX-BASED CHARACTERIZATION AND MEASUREMENTS FOR SEMICONDUCTOR THIN-FILM MATERIAL
Document Type and Number:
WIPO Patent Application WO/2022/125215
Kind Code:
A3
Abstract:
Certain examples are directed to methods for detection of anomalies in semiconductor thin-film materials, such as strains, defects and the like, that may precipitate defects in semiconductor processing steps and may adversely impact device and system-level functionality, processing, and yields. Certain methods use filtering optics to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a semiconductor-related material sample, and providing a set of sample-characterizing response data based on factors such as sets of polarization-state values, different wavelengths associated with the polarization states, and/or light-incidence angles characterizing separation of the different polarization states. Based on these factors, the types and severities of such anomalies may be analyzed and the related defects remedied.
Inventors:
PHAN THAIBAO (US)
WANG EVAN (US)
FAN JONATHAN (US)
WANG EVAN (US)
FAN JONATHAN (US)
Application Number:
PCT/US2021/057420
Publication Date:
July 28, 2022
Filing Date:
October 29, 2021
Export Citation:
Assignee:
UNIV LELAND STANFORD JUNIOR (US)
International Classes:
G01N21/89; G01B11/06; G01J3/447; G01N21/892
Foreign References:
| US20190094711A1 | 2019-03-28 | |||
| US20180066991A1 | 2018-03-08 | |||
| US8405830B2 | 2013-03-26 | |||
| US6134011A | 2000-10-17 |
Attorney, Agent or Firm:
CRAWFORD, Robert, J. (US)
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